Regents' Professor John D. Cressler in the School of Electrical and Computer Engineering (ECE) and his students have been working with silicon-germanium heterojunction bipolar transistors (SiGe HBTs) for …

5 germanium transistors OC602 spez. black glass case/cooling fin TELEFUNKEN. $6.95 0 bids 1d 12h 58m. 121д Russian Subminiature Germanium Transistor PNP Metal Housing. $1.10. 10 x BC309C PNP Transistor Low Noise CDIL. $2.19. 5 x OC602 spec. Ge-Transistors Glass Housing Cooling Sheet TELEFUNKEN.

Perfectly clean semiconductor has a characteristic noise level. This can be computed from physical constants. Dirty (impure) semiconductor has a higher noise level. Early Germanium's noise could 40dB (100:1) higher than theoretical. Sorting was costly and would yield a few "better" parts which were snapped-up by telephone, hearing-aid, radio ...

The discovery of the germanium transistor ushered in a new age of computing. Its technology would become the building blocks of modern electronics. In this article, you will learn about the history of the germanium transistor, its purpose, and pinout. History. Germanium was discovered as a valuable semiconductor in 1886 by Clemens Winkler.

Under Shockley's direction, John Bardeen and Walter Brattain demonstrated in 1947 the first semiconductor amplifier: the point-contact transistor, with two metal points in contact with a sliver of germanium. In 1948, …

Vacancy defects in germanium (Ge) adversely impact the electrical performance of Ge based metal-oxide-semiconductor field-effect transistor (MOSFET) in several ways.

Germanium is a chemical element with symbol Ge and atomic number 32, that's used as a semiconductor in transistors and diodes, popping up in a few classic effects like the early period Arbiter Fuzz Face, the storied Dallas Rangemaster and the Maestro Fuzz-Tone. "Subjectively the sound of Germanium offers a smoother, more-ear pleasing ...

readings expected with germanium transistors when checked on a VTVM has a 1.5 volt ohmmeter battery. Don't be surprised if many normal transistors show more base- ... One common defect is a short from collector to emitter. Often there is no corresponding short from the base to either the collector or emitter. This is difficult to under-

Germanium is known to diffuse into high-k dielectrics during germanium-based metal oxide semiconductor transistor process, which causes the degradation of …

Summary. This chapter discusses the atomoc and electronic structure of dopant impurities, point defects, Dangling Bond (DB), and hydrogen in germanium, …

Transistors that use a combination of silicon and germanium in the channel can reportedly be found in some recent chips, and they made an appearance in a 2015 demonstration of future chip ...

Point Defect Engineering in Germanium by Corentin Monmeyran Submitted to the Department of Materials Science and Engineering on August 31, 2016, in partial …

These were etched to eliminate surface defects. The point contacts were made from electrolytically pointed 0.1mm wire. ... The Siemens AFY10-AFY12 germanium mesa transistors could operate up to 600-1000MHz …

I could not find any information relating to this failure mode in germanium transistors, but I did find an article on the degradation of …

The work at Purdue on germanium informed the work at Bell Laboratories that led to their point-contact germanium transistor. [Petritz 1962, Seitz 1995, Henriksen 1987] ... Ironically RCA found that defect free germanium would cause increased wetting of the germanium wafer leading to oversized junction area (and hence increased collector ...

Back in the day when silicon transistors started taking the place of gemanium, there was a generally accepted rule that doubling the value of the emitter resistor was way to obtain the correct bias conditions, (within limits) In a great number of cases with old radios and amplifiers etc. this worked. whilst not absolutely theoretically …

There are a couple of germanium transistor models floating around on the internet. I've tried one or two and they just don't work like real germanium transistors. The forward voltages on the base-emitter and base-collector junctions are way too high and the transistors won't work in many circuits.

In this article, the authors analyze the impact of germanium amorphization on the interface defect concentration of state of the art high-k metal gate metal-oxide-semiconductor field-effect transistors.The gate etch is a crucial process step for the high-k gate first integration approach.Germanium implantation is used to amorphize the …

Many germanium transistors get more noisy over the years, even when sitting around. So even if you find the same part number you may have to go through a few to get the best noise figures. (I can't even guess how many of those old early 70s Kraco 8 track players I got in for repair making a frying sound, just change the germanium pre-amp ...

offered for reviewing Germanium in the spirit of recalling its original role at the onset of the semiconductor revolution 75 years ago and its great promise for the …

Vacancy defects in germanium (Ge) adversely impact the electrical performance of Ge based metal-oxide-semiconductor field-effect transistor (MOSFET) in several ways. They behave as an acceptor site, thereby deactivating n-type dopants in the source/drain region. They can also increase substrate leakage currents and impact …

NEW production, obviously with the same dies and masks, but updated where it counts, I found incredible to find, say, long gone BD130 ... ROHS compliant !!!!!! They also have Germanium transistors, including small signal PNP and NPN ones, AD162, AD149, ASZ15, etc. Unbelievable. This is not unreliable/suspect EBay or rusty NOS but …

Our Price: $2.00. 1 NOS MP16B Russian PNP Germanium Transistor Fuzz. Our Price: $2.50. 1 NOS MP25B Russian PNP Germanium Transistor Fuzz. Our Price: $2.50. 1 Original Russian made MP16A PNP Germanium transistor. These are known to have VERY low leakage and were made for the Russian military. Gains on what I've checked …

However, when ELO emerging from adjacent trenches coalesces, it forms new defects, as shown in Figure 3c (3). Defects originating at the Ge/Si interface in the trench (1) do …

Transistors exploit the low resistivity of materials, such as silicon and germanium, conduct electric current in the solid state, and the flow can be controlled in …

The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New …

Effect of CoSi 2 Formation Process on CMOS Transistor Electrical Properties for Sub-100-nm Memory Applications. ... Before additional SD implantation to lower the contact resistance, germanium ions were implanted to minimize out-diffusion of the implanted SD. ... As it is generally accepted that crystal defects could enhance material …

The leakage in a poly-crystalline germanium (poly-Ge) transistor was well suppressed. • It is indicated that the residual oxygen can passivate the defects in poly-Ge. Abstract. We investigated the effects of the annealing ambient during solid phase crystallization (SPC) on the crystallization temperature of amorphous Ge and the …

The development of the germanium transistor in 1948 opened the door to countless applications of solid state electronics. From 1950 through the early 1970s, this area provided an increasing market for germanium, but then high-purity silicon began replacing germanium in transistors, diodes, and rectifiers. (In Order of Case Style, * TC = +63°C ...

This article answers some common questions about the transistors used in cloning and modifying the Fuzz Face and similar pedals. It is meant for beginners who are confused about what devices to use and where to get them, and as a reference for more experienced DIYers. I wrote it in 2000 when I first began offering matched germanium transistors.